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Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2527A
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 6.0 1.7 MAX. 1500 800 12 30 125 5.0 2.0 UNIT V V A A W V A s
Tmb 25 C IC = 6.0 A; IB = 1.2 A ICM = 6.0 A; IB(end) = 0.55 A
PINNING - SOT93
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 125 150 150 UNIT V V A A A A mA A W C C
average over any 20 ms period Tmb 25 C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 45 MAX. 1.0 UNIT K/W K/W
1 Turn-off current.
November 1995
1
Rev 1.100
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2527A
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 6.0 A; IB = 1.2 A IC = 6.0 A; IB = 1.2 A IC = 1 A; VCE = 5 V IC = 6 A; VCE = 5 V
MIN. 7.5 800 6 5
TYP. 13.5 10 7
MAX. 0.25 2.0 0.25 5.0 1.3 21 9
UNIT mA mA mA V V V V
Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (64 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICM = 6.0 A; LC = 170 H; Cfb = 5.4 nF; IB(end) = 0.55 A; LB = 0.6 H; -VBB = 2 V; (-dIB/dt = 3.33 A/s) TYP. 145 MAX. UNIT pF
1.7 0.1
2.0 0.2
s s
IC / mA
+ 50v 100-200R
250
Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R
200
100
0 VCE / V
min VCEOsust
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
November 1995
2
Rev 1.100
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2527A
TRANSISTOR IC DIODE
I CM
VCC
t
LC
IB
I B end t 5 us 6.5 us 16 us
IBend LB T.U.T.
CFB
VCL
-VBB
VCE t
Fig.3. Switching times waveforms.
Fig.6. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V; LC = 100 - 200 H; VCL 1500 V; LB = 3 H; CFB = 1 - 2.2 nF; IB(end) = 1 - 2 A
h FE
Tj = 85 C Tj = 25 C Tj = -40 C
ICM 90 % IC
100
BU2527A
10 % tf ts IB IBend
10
t
t
1 0.01
- IBM
0.1
1 IC / A
10
100
Fig.4. Switching times definitions.
Fig.7. Typical DC current gain. hFE = f (IC) VCE = 5 V
+ 150 v nominal adjust for ICM
1.2 1.1 1
VBESAT / V
Tj = 85 C Tj = 25 C
BU2527A
Lc
0.9 0.8 0.7 IC/IB = 3 5
IBend
LB
T.U.T. Cfb
BY228
0.6 0.5
-VBB
0.4
0.1
1 IC / A
10
Fig.5. Switching times test circuit.
Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB
November 1995
3
Rev 1.100
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2527A
10
VCESAT / V
Tj = 85 C Tj = 25 C
BU2527A
4 3.5 3
ts, tf / us
BU2527AF
1 IC/IB = 5 3 0.1
2.5 2 1.5 1 0.5 5A IC = 6A
0.01 0.1 1 IC / A 10 100
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IB / A 2
Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 64 kHz
PD% Normalised Power Derating
1.2 1.1 1 0.9 0.8 0.7 0.6
VBESAT / V
Tj = 85 C Tj = 25 C
BU2527A
120 110 100 90 80 70 60 50
IC = 7A 6A 5A 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IB / A 2
40 30 20 10 0 0 20 40 60 80 100 Tmb / C 120 140
Fig.10. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
BU2527AF
Fig.13. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb)
Zth / (K/W) BU2525A
100
Poff / W
10
1
IC = 10 6A 5A
0.5 0.1 0.2 0.1 0.05 0.02 0.01 D=0 0.001 1E-06
P D tp D= tp T t
T
1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IB / A 2
1E-04
1E-02 t/s
1E+00
Fig.11. Typical turn-off losses. Tj = 85C Poff = f (IB); parameter IC; f = 64 kHz
Fig.14. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
November 1995
4
Rev 1.100
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2527A
IC / A
BU2527AF
IC / A 100
BU2525A tp =
30
ICM ICDC 10
= 0.01
40 us
20
10
100 us
0 0 500 VCE / V 1000 1500
Ptot 1 1 ms
Fig.16. Reverse bias safe operating area. Tj Tjmax
0.1
10 ms DC
0.01 1 10 100 1000 VCE / V
Fig.15. Forward bias safe operating area. Tmb = 25 C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature.
November 1995
5
Rev 1.100
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2527A
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
15.2 max 14 13.6 2 max
4.25 4.15
4.6 max 2 4.4
21 max 12.7 max
2.2 max dimensions within this zone are uncontrolled 1 5.5 11
Fig.17. SOT93; pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8".
0.5 min
13.6 min
2
3 1.15 0.95 0.5 M 1.6 0.4
November 1995
6
Rev 1.100
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2527A
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1995
7
Rev 1.100

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